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Prisemi

A high-tech enterprise dedicated to the research and development, production, sales and service of new power semiconductor devices. The company has more than two hundred core technology patents, and has formed a complete power device product series such as super junction MOSFET, insulated gate bipolar transistor (IGBT), medium and low voltage SGT MOSFT, medium and low voltage trench MOSFET, high voltage planar MOSFET and power modules.

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Contact Us
  • Tel: +86-755-82768736
  • Fax: +86- 0755-82532835
  • Address: A728-729 (Headquarters), Automobile Building, No. 45 Yannan Road, Futian District, Shenzhen